Samsung has announced that they’ve developed a low-voltage 1.25V RAM for servers. This greener DDR3 RDIMM module uses 4Gb 30nm process technology and is more power efficient than 1.5V or 1.35V DDR3 modules.

To put it in perspective a 1.25V 16GB RDIMM operating at a bandwidth of up to 1,333Mbps is 15 percent more power efficient (consumes just 3.7 watts per hour) as compared to a similar 1.35V 16GB RDIMM.

Samsung will produce these RAMs in capacities of 4, 8 and 16GB.

Samsung has announced the development of new 32GB DDR3 RAMs that use 3D Through Silicon Via or simply, TSV package technology. These RDIMM modules are apt for high-performance servers and are based on Samsung’s 30nm-class 4Gb DDR3. Needless to say, the modules boast high transmission speeds while consuming very less power. The 32GB RDIMM with TSV transmits at a speed of up to 1,333Mbps whereas consumes just 4.5 watts per hour, which is the lowest power consumption amongst the enterprise servers.

Samsung says such performance and power consumption is due to the adoption of TSV tech that enables a multi-stacked chip to work at comparable levels of a single silicon chip by shortening the signal lines significantly.

These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers. We will keep providing memory solutions with higher performance and density, while enhancing shared value in the design of ever-greener server systems.

Samsung today announced that they’ve started mass producing 40nm-based 8GB DDR3 RAM making it the highest density memory module available for laptops and mobile workstations. Samsung is producing SoDIMM and UDIMM modules based on 4Gb 40nm DDR3 RAM.

Dell is the first company to offer these high-performance modules in their Precision M6500 mobile workstation.

These new 8GB modules boast the best power-performance ratio which uses 1.5V of power and operates at 1333MHz. Moreover a single 8GB DDR3 module consumes 53 percent less power than two 4GB DDR3 modules.

Samsung’s 30nm-based 2Gb (gigabit) DDR3 module that was unveiled in February is now under mass production. The 30nm 2Gb RAM modules are industry’s first that offer the highest performance, mainly due to the innovative circuit design.

Thirty nano-class DDR3 DRAM will deliver the most satisfying user experience possible, offering extremely high performance and reduced power consumption for PC and server applications designed to capitalize on new multi-core processors.

Samsung says 30nm-class modules used for servers can reach up to 1.866 Gbps while consuming 1.35 volts whereas PC modules run up to 2.133 Gbps at 1.5 volts. When compared with a DDR2 and a 50nm DDR3 module, the 30nm-based DDR3 is 3.5 times and 1.6 times faster respectively.

Samsung plans to produce 30nm DDR3 RAMs in 4Gb density by year end.

Samsung has grabbed another industry’s first title by developing a low-power 4Gb (gigabit) DDR3 RAM using 40nm class process technology. This memory promises to bring significant power savings and double the density as compared to 40nm-based 2Gb DDR3 developed last year. For instance, a 16GB module based on 4Gb saves up to 35 percent power opposed to a 16GB module based on 2Gb DDR3.

The RAM is apt for high end notebooks but it’s the server systems and data centers that can take great advantage of its power saving ability. In a server environment, a 60nm 1Gb DDR2 consumes 210W whereas the new 4Gb DDR3 consumes only 36W, power savings of about 83 percent.

Samsung is currently mass producing 16GB, 32GB RDIMMs and 8GB SoDIMMs modules based on 4Gb DDR3.

Samsung today unveiled industry’s first DDR3 RAM using the 30nm-class process technology. The 2 gigabit (Gb) memory module has successfully completed customer evaluations and is claimed to increase productivity while reducing power consumption.

Mass production of these RAMs is expected in the second half of this year and when applied with the 30nm process tech, it helps to increase productivity by 60 percent over 40nm DDR3 RAM as well as reduce power consumption by up to 30 percent over a 50nm DDR3 module.

Samsung reckons 30nm DDR3 modules will be used in most future computing products ranging from servers to desktops to laptops and other mobile devices.

Samsung and Microsoft have teamed up to promote usage of energy efficient computers. Both the companies will pitch consumers to go for environmental friendly computers, which is possible with Microsoft’s Windows 7 OS onboard along with Samsung’s energy efficient 40nm-based DDR3 RAM.

Windows 7 claims to reduce power consumption with the new power management function and when used with Samsung’s 40nm DDR3 RAM, a user can achieve high performance while using less power.

Samsung also announced to upgrade all its corporate PCs to Microsoft’s newest OS starting from 2010.

The low-voltage DDR3 RAM coupled with 40-nm process tech and enterprise SSDs helps too save over 10 percent of power per server.

Despite these being power efficient, they perform better too. A DDR3 equipped server when compared to a DDR2 powered server gives double the performance with speeds reaching up to 1333Mbps. An SSD too, has much better IOPs (input/outputs per second) than HDDs and also gives good transfer rate, reaching up to 230MB/s.

Samsung again takes the world’s first claim by announcing the mass production of 2Gb DDR3 RAMs based on 40nm process technology. Using the 40nm process with the 2Gb chip, Samsung can increase the production productivity by 60 percent, achieve energy efficiency and better performance. It now supports a data rate up to 1.6Gb/s which is twice as fast to 800Mb/s based on 1Gb chip.

Though the OEM or commercial launch is not yet announced, Samsung will be producing RDIMMs for servers, UDIMMs for desktops and SODIMMs for notebooks based on this chip.

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It was just the beginning of the year when Samsung was flaunting its 16GB 4Gb DDR3 creation and now they have come up with yet another memory module based on its 50nm 4Gb DDR3 tech. Apt for the servers, the 32GB RDIMM houses nine rows of 16Gb DDR3 mounted on each side of the module. The memory consumes just 1.35 volts and improve throughput by 20 percent as compared to 1.5 volt ones.

No word on the pricing or availability.

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