NAND
Samsung’s NAND flash plant in China to cost $7 billion
Samsung’s planned NAND flash plant in Xian, China would cost them $7 billion, including the initial investment of $2.3 billion. It’s a multi-year project and will make Samsung’s largest overseas chip plant that will cater to the demands of world’s biggest telecom market. Late last month, Samsung revealed the intended location of the plant [...]
Samsung may setup NAND Flash plant in Xian in China
Samsung has confirmed that they’ve picked Xian as their choice to setup a NAND flash memory plant in China. However, they’ll have to wait as the discussions are in an “early stage” and will have to be approved by Chinese government agencies. If approved, this will be Samsung’s overseas chip manufacturing plant. Earlier this [...]
Samsung gets the nod to setup NAND Flash Plant in China
Samsung has got the approval from the Korean government to setup a NAND flash memory plant in China. The decision came after the Ministry of Knowledge Economy held two meetings to evaluate the company’s technology plans, possible technological leaks and the impact on South Korean economy since Samsung contributes a decent chunk of exports. [...]
Samsung starts operation of its 16th Production Line, mass production of 20nm memory
In an industry where memory chip manufacturers are cutting down on production and expansion due to the reduction in demand, Samsung is doing quite the opposite. Samsung has announced to start operations of its 16th production line, which is touted to be the world’s largest memory chip production line. Samsung had started construction of [...]
Samsung develops 64Gb 20nm-based NAND Flash with Toggle DDR 2.0
Samsung today announced that they’ve created the industry’s first 64Gb NAND Flash chip using the 20nm fabrication process and Toggle DDR 2.0 interface. Samsung says the new chip will suffice the high-performance requirement of upcoming smartphones, tablets and SSDs. The 64Gb MLC chip can transmit data at up to 400Mb (megabits) per second, which [...]
Samsung and Toshiba to support toggle DDR 2.0 NAND specification
Samsung and Toshiba have agreed to develop a high-performance NAND flash memory that will use toggle DDR 2.0 specification with 400Mbps interface. The new NAND memory is said to be beneficial to NAND-based consumer electronics goods and both Samsung as well as Toshiba will support it to allow broad-scale adoption amongst NAND vendors and [...]
Samsung creates 20nm NAND Flash for use in memory cards
Samsung has announced the industry’s first 20nm-based NAND flash chips aimed to use in SD memory cards and embedded memory solutions. Samsung says memory cards based on this process tech give faster write and read speeds. Samsung had created 30nm-based NAND flash a year before and today these 20nm MLC NAND touts to give [...]
Power Outage at Samsung plant jacks up NAND flash price
Yesterday, a semiconductor plant of Samsung Electronics in Giheung, Gyeonggi Province suffered a blackout for few hours that eventually pushed up the NAND flash chip price. The sudden power cut happened around 2:30pm at plant’s K2 and K5 section and though the blackout lasted couple of hours, it drove the daily average spot price [...]
30nm Asynchronous DDR NAND flash enters mass production
In addition to 3-bit MLC NAND chips, Samsung also started mass producing 32Gb MLC NAND memory supporting asynchronous DDR interface and have already shipped the first batch to major OEMs. NAND flash is used in SSDs, SD cards, PMPs etc. and with the adoption of asynchronous DDR NAND, it can greatly improve the performance, [...]
Samsung plans to snag up to 45% of DRAM and NAND flash market by 2010
Samsung Electronics is currently the world’s largest memory chipmaker and it will strive to widen the gap, according to Korea Times. By next year, Samsung will look to increase its global market share of DRAM chips to up to 45 percent from the previously forecasted 36 percent. Additionally, Samsung also plans to achieve the [...]