Samsung has announced that they’ve developed a low-voltage 1.25V RAM for servers. This greener DDR3 RDIMM module uses 4Gb 30nm process technology and is more power efficient than 1.5V or 1.35V DDR3 modules.

To put it in perspective a 1.25V 16GB RDIMM operating at a bandwidth of up to 1,333Mbps is 15 percent more power efficient (consumes just 3.7 watts per hour) as compared to a similar 1.35V 16GB RDIMM.

Samsung will produce these RAMs in capacities of 4, 8 and 16GB.

Samsung has announced the development of new 32GB DDR3 RAMs that use 3D Through Silicon Via or simply, TSV package technology. These RDIMM modules are apt for high-performance servers and are based on Samsung’s 30nm-class 4Gb DDR3. Needless to say, the modules boast high transmission speeds while consuming very less power. The 32GB RDIMM with TSV transmits at a speed of up to 1,333Mbps whereas consumes just 4.5 watts per hour, which is the lowest power consumption amongst the enterprise servers.

Samsung says such performance and power consumption is due to the adoption of TSV tech that enables a multi-stacked chip to work at comparable levels of a single silicon chip by shortening the signal lines significantly.

These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers. We will keep providing memory solutions with higher performance and density, while enhancing shared value in the design of ever-greener server systems.

Samsung has announced that they’ve started mass producing 32GB memory modules based on 30nm 4Gb DDR3 chips. Samsung says such type of RAM is beneficial for advanced server systems and cloud computing and gives about 50 percent increase in productivity with data transmission speed up to 1866Mbps as compared to a 40nm-based 4Gb DDR3. It also reduces power consumption by up to 18 percent.

Samsung started producing 30nm-based 4Gb DDR3 RAM in February and has been offering various DRAM solutions based on this 30nm 4Gb chip.

Samsung also confirmed to ship 4Gb DDR3 memory using 20nm process in second half of this year.

Samsung has announced that they’ve started production of its low-power DDR2 RAM for smartphones that was unveiled in December last year. The 30nm-class process-based 4Gb LPDDR2 RAM is industry’s first DRAM chip that will help manufacturers to churn out slimmer, lighter smartphones, tablets and other mobile devices with prolonged battery life.

According to Samsung, the new chip boasts superior performance with low power consumption and delivers a data transmission speed of 1,066Mbps as compared to today’s MDDR that delivers a speed of around 333 to 400Mbps. Also, when compared to an older 1GB (8Gb) LPDDR2 package, the new chips will help to reduce package height by 20 percent and consume 25 percent less power.

Samsung will use these 4Gb LPDDR2s to produce 1GB DRAMs (8Gb) from this month whereas a 2GB DRAM (16Gb) production will begin from next month.

As part of Samsung’s Green DDR3 range, Samsung has announced the development of an 8GB RDIMM memory module using three-dimensional (3D) chip stacking technology which is also referred to as ‘through silicon via’ (TSV).

Samsung says major customers have successfully tested the 3D-TSV module that helps to save up to 40 percent of power as compared to a conventional RDIMM module.

These 40nm-class RDIMM are apt for servers as the TSV tech helps to raise the DRAM density by more than 50 percent while keeping the power consumption to bare minimum.

Samsung reckons wide use of 3D-TSV technology will happen from 2012 and confirms to develop a 30nm-class module in the near future.

The TSV technology fabricates micron-sized holes through the silicon vertically, with a copper filling. By using the ‘through silicon via’ bonding process instead of conventional wire bonding, signal lines are shortened significantly, enabling the multi-stacked chip to function at levels comparable to a single silicon chip.

Samsung has announced that they’ve developed and started sampling the industry’s first monolithic four gigabit (Gb), low power double data rate 2 (LPDDR2) DRAM. Samsung says next generation smartphones and tablet PCs will be able to take advantage of this power efficient RAM.

Based on 30nm fabrication process, the 4Gb (Gigabit) LPDDR2 DRAM can transfer data up to 1,066 megabits per second (Mbps), which is more than double the current industry prevalent – MDDR.

Samsung is currently sampling an 8Gb (1GB) LPDDR2 module stacking two 4Gb chips, which makes the solution 20 percent thinner and consumes 25 percent less power when compared to an 8Gb solution with four 2Gb chips.

Samsung is also planning to provide a 16Gb (2GB) LPDDR2 DRAM by integrating four 4Gb chips as and when the demand grows.

Samsung today announced that they’ve started mass producing 40nm-based 8GB DDR3 RAM making it the highest density memory module available for laptops and mobile workstations. Samsung is producing SoDIMM and UDIMM modules based on 4Gb 40nm DDR3 RAM.

Dell is the first company to offer these high-performance modules in their Precision M6500 mobile workstation.

These new 8GB modules boast the best power-performance ratio which uses 1.5V of power and operates at 1333MHz. Moreover a single 8GB DDR3 module consumes 53 percent less power than two 4GB DDR3 modules.

Samsung’s 30nm-based 2Gb (gigabit) DDR3 module that was unveiled in February is now under mass production. The 30nm 2Gb RAM modules are industry’s first that offer the highest performance, mainly due to the innovative circuit design.

Thirty nano-class DDR3 DRAM will deliver the most satisfying user experience possible, offering extremely high performance and reduced power consumption for PC and server applications designed to capitalize on new multi-core processors.

Samsung says 30nm-class modules used for servers can reach up to 1.866 Gbps while consuming 1.35 volts whereas PC modules run up to 2.133 Gbps at 1.5 volts. When compared with a DDR2 and a 50nm DDR3 module, the 30nm-based DDR3 is 3.5 times and 1.6 times faster respectively.

Samsung plans to produce 30nm DDR3 RAMs in 4Gb density by year end.

Samsung has grabbed another industry’s first title by developing a low-power 4Gb (gigabit) DDR3 RAM using 40nm class process technology. This memory promises to bring significant power savings and double the density as compared to 40nm-based 2Gb DDR3 developed last year. For instance, a 16GB module based on 4Gb saves up to 35 percent power opposed to a 16GB module based on 2Gb DDR3.

The RAM is apt for high end notebooks but it’s the server systems and data centers that can take great advantage of its power saving ability. In a server environment, a 60nm 1Gb DDR2 consumes 210W whereas the new 4Gb DDR3 consumes only 36W, power savings of about 83 percent.

Samsung is currently mass producing 16GB, 32GB RDIMMs and 8GB SoDIMMs modules based on 4Gb DDR3.

Samsung today unveiled industry’s first DDR3 RAM using the 30nm-class process technology. The 2 gigabit (Gb) memory module has successfully completed customer evaluations and is claimed to increase productivity while reducing power consumption.

Mass production of these RAMs is expected in the second half of this year and when applied with the 30nm process tech, it helps to increase productivity by 60 percent over 40nm DDR3 RAM as well as reduce power consumption by up to 30 percent over a 50nm DDR3 module.

Samsung reckons 30nm DDR3 modules will be used in most future computing products ranging from servers to desktops to laptops and other mobile devices.