16GB NAND flash memory

16GB Flash memory


Samsung’s ‘Me First’ list has got another inclusion. They are the first one to mass produce 16GB NAND flash memories. The 16GB memory is based on Multi-Level cell (MLC) structure and will be fabricated in 51 nanometers (nm) which means we get better read/write speed. The new read/write speed compared to 60nm flash memory is almost double.

With the introduction of 51nm chips, Samsung reckons that they are half generation ahead than its competitors.


Related Posts: