Samsungâ€™s â€˜Me Firstâ€™ list has got another inclusion. They are the first one to mass produce 16GB NAND flash memories. The 16GB memory is based on Multi-Level cell (MLC) structure and will be fabricated in 51 nanometers (nm) which means we get better read/write speed. The new read/write speed compared to 60nm flash memory is almost double.
With the introduction of 51nm chips, Samsung reckons that they are half generation ahead than its competitors.