Samsung has unveiled the industry’s fastest UFS 5.0 storage solution, designed for next-generation on-device AI applications. The new standard integrates the latest embedded memory interface specification from JEDEC and reaches a bandwidth of up to 10.8 gigabytes per second (GB/s).
The solution delivers a sequential read speed of up to 10.8 GB/s and a sequential write speed of up to 9.5 GB/s, more than twice as fast as the previous UFS 4.1 standard. Samsung says the gain enables faster storage and processing of large data for on-device AI tasks, including running large language models (LLMs) locally with reduced latency.
Power efficiency improves by more than 40% over UFS 4.1, achieved through clock gating and multi-voltage technologies that cut the power required to transfer the same amount of data.
The UFS 5.0 package measures 7.5mm x 13mm x 0.9mm, 16.7% smaller than its predecessor. Samsung says the smaller footprint suits mobile, wearable, and extended reality (XR) devices.
Samsung will begin mass production of the UFS 5.0 in the fourth quarter of 2026, in capacities up to 1TB. The company plans to scale supply for flagship smartphones, XR headsets, and wearables.
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