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You are here: Home / Hardware / Samsung develops 64Gb 20nm-based NAND Flash with Toggle DDR 2.0

Samsung develops 64Gb 20nm-based NAND Flash with Toggle DDR 2.0

May 12, 2011 By kunal Leave a Comment

20nm 64Gb MLC NAND Flash

 

Samsung today announced that they’ve created the industry’s first 64Gb NAND Flash chip using the 20nm fabrication process and Toggle DDR 2.0 interface. Samsung says the new chip will suffice the high-performance requirement of upcoming smartphones, tablets and SSDs.

The 64Gb MLC chip can transmit data at up to 400Mb (megabits) per second, which is 10 times faster than the prevalent SLC NAND flash memory and about 3 times faster than chips with Toggle DDR 1.0.

The high-speed bandwidth will also help devices supporting USB 3.0 and SATA 6Gbps interfaces.

The 64Gb NAND chip offers a 50 percent productivity gain compared to 20nm-class 32Gb MLC NAND and more than double when compared to 30nm-class 32Gb MLC NAND flash.

20nm 64Gb MLC NAND Flash

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