Samsung has announced a deeper collaboration with ASML, which will see it use the Dutch company’s High NA extreme ultraviolet (EUV) lithography and advanced semiconductor manufacturing technologies to “drive” the next generation of innovation in the AI era.
The semiconductor industry has used the 6-inch photomask format for decades, and now Samsung has confirmed that it will join an industry-wide initiative to develop next-generation 12-inch photomask technology. The shift to 12-inch masks is expected to increase fab productivity, lower chipmaking costs, and remove stitching constraints, allowing everyone to take advantage of High NA EUV. Samsung will work with industry partners to develop the required mask technologies and supporting infrastructure.
Samsung also plans to introduce ASML’s High NA EUV lithography into its DRAM manufacturing by 2028. This will be one of the first such deployment in the industry and Samsung expects that it will extend the DRAM scaling roadmap with process simplification and increased efficiency.
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