Samsung’s Advanced Institute of Technology (SAIT) has managed to achieve a breakthrough by developing a new transistor structure using graphene that promises to enable semiconductor devices to increase the performance which the current silicon transistors aren’t able to achieve.
Graphene possesses electron mobility more than 200 times that of silicon but unlike silicon, graphene does not have the ability to switch current on or off. However, SAIT has managed to implement it by integrating a graphene-silicon Schottky barrier that can switch current on and off.
SAIT says they’ve managed to secure 9 major patents related to this and have solved the biggest problem related to graphene transistor structure research.
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