Samsung creates 40nm 4Gb DDR3 RAM

Samsung has grabbed another industry’s first title by developing a low-power 4Gb (gigabit) DDR3 RAM using 40nm class process technology. This memory promises to bring significant power savings and double the density as compared to 40nm-based 2Gb DDR3 developed last year. For instance, a 16GB module based on 4Gb saves up to 35 percent power opposed to a 16GB module based on 2Gb DDR3.

The RAM is apt for high end notebooks but it’s the server systems and data centers that can take great advantage of its power saving ability. In a server environment, a 60nm 1Gb DDR2 consumes 210W whereas the new 4Gb DDR3 consumes only 36W, power savings of about 83 percent.

Samsung is currently mass producing 16GB, 32GB RDIMMs and 8GB SoDIMMs modules based on 4Gb DDR3.