Samsung’s 30nm-based 2Gb (gigabit) DDR3 module that was unveiled in February is now under mass production. The 30nm 2Gb RAM modules are industry’s first that offer the highest performance, mainly due to the innovative circuit design.
Thirty nano-class DDR3 DRAM will deliver the most satisfying user experience possible, offering extremely high performance and reduced power consumption for PC and server applications designed to capitalize on new multi-core processors.
Samsung says 30nm-class modules used for servers can reach up to 1.866 Gbps while consuming 1.35 volts whereas PC modules run up to 2.133 Gbps at 1.5 volts. When compared with a DDR2 and a 50nm DDR3 module, the 30nm-based DDR3 is 3.5 times and 1.6 times faster respectively.
Samsung plans to produce 30nm DDR3 RAMs in 4Gb density by year end.
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