As part of Samsung’s Green DDR3 range, Samsung has announced the development of an 8GB RDIMM memory module using three-dimensional (3D) chip stacking technology which is also referred to as ‘through silicon via’ (TSV).
Samsung says major customers have successfully tested the 3D-TSV module that helps to save up to 40 percent of power as compared to a conventional RDIMM module.
These 40nm-class RDIMM are apt for servers as the TSV tech helps to raise the DRAM density by more than 50 percent while keeping the power consumption to bare minimum.
Samsung reckons wide use of 3D-TSV technology will happen from 2012 and confirms to develop a 30nm-class module in the near future.
The TSV technology fabricates micron-sized holes through the silicon vertically, with a copper filling. By using the ‘through silicon via’ bonding process instead of conventional wire bonding, signal lines are shortened significantly, enabling the multi-stacked chip to function at levels comparable to a single silicon chip.
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