Earlier this year, Samsung confirmed the location of the memory plant in China and today the Korean giant held a groundbreaking ceremony for the memory fabrication line in Xian in China. Samsung Electronics Vice Chairman and CEO Dr. Oh-hyun Kwon led the event that was attended by about 600 attendees.
This will be Samsung’s largest investment in China with a phased total investment of $7 billion and will pump in $2.3 billion initially in the Samsung China Semiconductor complex. Samsung expects the plant to reach full-fledged production in 2014 where they’ll produce 10nm-class NAND flash memory chips.
Leave a Reply