Samsung has commenced its operation at the Xi’an plant in China. The new plant that took 20 months after the groundbreaking ceremony has a total area of approximately 230,000 square meters and will be utilised to produce Samsung’s 3D V-NAND memory chip.
With the construction of the new factory, Samsung expects to secure memory production base in China and help them produce a stable supply to its existing customers.
Samsung announced the 3D NAND Flash technology in August last year and shortly announcing an SSD meant for enterprise using by the same technology.
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