Samsung creates DDR4 RAM for servers using TSV Package Tech

Samsung Electronics has pulled another industry first by mass producing 64GB (gigabyte) DDR4 RDIMMs (Registered Dual Inline Memory Modules) that use the 3D “through silicon via” (TSV) package technology. Targeted at servers and enterprise applications, these modules offers high-density along with high performance and are processed using 20nm class technology.

These new RDIMMs feature 36 DDR4 DRAM chips – each consisting of four 4-gigabit (Gb) DDR4 DRAM dies – and boasting performance two times than a same capacity module and consumes half the power. Samsung believes future iterations will allow them to stack more than four DDR4 dies with 3D TSV technology allowing them to create higher density RAM modules.

To build a 3D TSV DRAM package, the DDR4 dies are ground down as thin as a few dozen micrometers, then pierced to contain hundreds of fine holes. They are vertically connected through electrodes that are passed through the holes.