Samsung today confirmed that they’ve started mass production of its 128GB DDR4 RAM modules. Targeted at servers and data centers, the modules are industry’s first “through silicon via” (TSV) DDR4 128GB memory modules.
The 128GB TSV DDR4 RDIMM comprises of 144 DDR4 chips, each containing four 20-nanometer (nm)-based 8-gigabit (Gb) chips assembled with TSV packaging technology that results in a low-power solution by up to 50 percent with speeds at up to 2,400Mbps, about double the performance compared to 64GB LRDIMMs.
Conventional chip packages interconnect die stacks using wire bonding, whereas in TSV packages, the chip dies are ground down to a few dozen micrometers, pierced with hundreds of fine holes and vertically connected by electrodes passing through the holes, allowing for a significant boost in signal transmission. In addition to capitalizing on the industry’s highest capacity and TSV’s advanced circuitry, Samsung’s 128GB TSV DDR4 module has a special design through which the master chip of each 4GB package embeds the data buffer function to optimize module performance and power consumption.
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