Samsung has announced the mass production of industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory. Samsung says the new chip is based on 48 layers of 3-bit MLC arrays that make it a perfect fit for SSDs and will pave way for larger capacity “multi-terabyte” SSDs. The third generation V-NAND chip now […]
3D V-NAND
Samsung starts manufacturing at China’s Xi’an plant
Samsung has commenced its operation at the Xi’an plant in China. The new plant that took 20 months after the groundbreaking ceremony has a total area of approximately 230,000 square meters and will be utilised to produce Samsung’s 3D V-NAND memory chip. With the construction of the new factory, Samsung expects to secure memory production […]
Samsung unveils world’s first SSD for enterprise based on 3D V-NAND technology
Last week, Samsung started mass producing 3D Vertical NAND (V-NAND) flash memory and at the Flash Memory Summit 2013, Samsung announced the world’s first SSD meant for enterprise based on 3D V-NAND technology. The use of 3D V-NAND enables Samsung to go beyond the 10nm process class and offer a performance improvement of about 20 […]
Samsung starts mass production of 3D Vertical NAND Flash
UPDATE: You can now find the presentation deck (PDF) of Samsung explaining 3D V-NAND at the Flash Memory Summit. Click here Samsung has announced the mass production of the industry’s first 3D Vertical NAND (V-NAND) flash memory. Today’s flash memory manufacturing process technology has reached to 10nm-class and given the flash memory based on planar […]