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Samsung develops 20nm 64Gb NAND Flash memory

October 13, 2010 By kunal 1 Comment

  Samsung today announced that they’ve created the industry’s first 3-bit-cell 64Gb (gigabit) NAND flash memory based on 20nm process technology. Samsung says this new chip adopts Toggle DDR technology, giving better performance and can be used in high-density flash solutions like USB flash drives or SD memory cards. The 8GB 20nm chip NAND flash […]

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