Samsung has developed a new mobile DRAM that will enable mobile devices like smartphones and tablet PCs to achieve faster data transmissions. Based on 50nm-class process, the new 1 Gigabit (Gb) mobile DRAM adopts a wide I/O interface that can transmit data up to 12.8GB (Gigabyte) per second.
The new DRAM increases the bandwidth eight times while at the same time reducing to power consumption by almost 87 percent.
Samsung managed to achieve faster data transmission speeds with the use of 512 pins for data input and output which is way more than previous mobile DRAMs that used a maximum of 32 pins.
Going forward, Samsung expects to develop a 4Gb I/O mobile DRAM based on 20nm-process by 2013.