Samsung starts mass producing 20nm-based 4Gb DDR3 RAM


Samsung today announced that they’ve started mass production of its “most advanced DDR3 memory” based on 20nm process technology. The new 4Gb (Gigabit) DRAM from Samsung utilises a modified double patterning technology with the immersion ArF lithography, which Samsung reckons paves the way for next generation 10nm-class DRAMs.

With the new 20nm DDR3 DRAM, Samsung has managed to improve its manufacturing productivity by 30 percent and saves up to 25 percent of the energy consumed compared to the 25nm DDR3 modules.