It was in March 2014 when Samsung had announced the mass production of 20nm 4Gb DDR3 chips and today they have confirmed the mass production of industry’s first 10nm-based 8Gb DDR4 DRAM modules. The 10nm modules were prone to scaling issues but Samsung has managed to resolve it using “ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment”.
Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry. In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.
Samsung says the new DRAM improves wafer productivity by 30 percent when compared to 20nm DDR4 RAM and has a data transfer rate of 3200Mbps and consume up to 20 percent less power compared to the 20nm counterpart.
Thanks to this breakthrough, Samsung also expects to introduce a 10nm-class mobile DRAM solution with high density and speed later this year.
Leave a Reply