It was in March 2014 when Samsung had announced the mass production of 20nm 4Gb DDR3 chips and today they have confirmed the mass production of industry’s first 10nm-based 8Gb DDR4 DRAM modules. The 10nm modules were prone to scaling issues but Samsung has managed to resolve it using “ArF (argon fluoride) immersion lithography, free […]
RAM
Samsung starts production of 128GB DDR4 RAMs
Samsung today confirmed that they’ve started mass production of its 128GB DDR4 RAM modules. Targeted at servers and data centers, the modules are industry’s first “through silicon via” (TSV) DDR4 128GB memory modules. The 128GB TSV DDR4 RDIMM comprises of 144 DDR4 chips, each containing four 20-nanometer (nm)-based 8-gigabit (Gb) chips assembled with TSV packaging […]
Samsung starts mass production of 8Gb LPDDR4 Mobile RAM
Samsung today confirmed to have started mass production of industry’s first 8 Gigabit (Gb) low power double data rate 4 (LPDDR4) mobile DRAM. The new mobile DRAM is based on Samsung’s 20nm process technology that enables twice the performance and density, thus allowing Samsung to create a 4 Gigabyte (GB) LPDDR4 package. It is safe […]
Samsung starts mass producing 20nm-based 4Gb DDR3 RAM
Samsung today announced that they’ve started mass production of its “most advanced DDR3 memory” based on 20nm process technology. The new 4Gb (Gigabit) DRAM from Samsung utilises a modified double patterning technology with the immersion ArF lithography, which Samsung reckons paves the way for next generation 10nm-class DRAMs. With the new 20nm DDR3 DRAM, Samsung […]
Samsung develops 1GB LPDDR4 for Mobile Devices
Samsung has taken the crown to develop the industry’s first 8Gb (gigabit) LPDDR4 (low power double data rate 4) mobile DRAM. The next-generation LPDDR4 will be used in upcoming mobile devices that will enable devices to be faster and more responsive and support high resolution displays with an improved battery life. Samsung says the new […]