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toggle DDR 2.0

Samsung develops 64Gb 20nm-based NAND Flash with Toggle DDR 2.0

May 12, 2011 By kunal Leave a Comment

  Samsung today announced that they’ve created the industry’s first 64Gb NAND Flash chip using the 20nm fabrication process and Toggle DDR 2.0 interface. Samsung says the new chip will suffice the high-performance requirement of upcoming smartphones, tablets and SSDs. The 64Gb MLC chip can transmit data at up to 400Mb (megabits) per second, which […]

Samsung and Toshiba to support toggle DDR 2.0 NAND specification

July 22, 2010 By kunal Leave a Comment

  Samsung and Toshiba have agreed to develop a high-performance NAND flash memory that will use toggle DDR 2.0 specification with 400Mbps interface. The new NAND memory is said to be beneficial to NAND-based consumer electronics goods and both Samsung as well as Toshiba will support it to allow broad-scale adoption amongst NAND vendors and […]

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